Liangbing Hu

Background
I was born in Hubei Provience of China. I attended University of Science and Technology of China (USTC) from 1997 and got BA in applied physics in 2002.

Current Research
I am studying the properties and the device applications of nanotube (NT) films. Currently I am using various methods to fabricate single nanotubes films on various surfaces based on nanotube solutions, and studing the physical properties of the film including the dc and ac conductivity (up to 100MHz), microwave properties using a cavity perturbation method, and optical properties (UV-Vis and Infrared). Also, I am interested in the device applications of the nanotube films, especially field effect transistors (FETs). We are using photolithography and shadow masks to fabricate NT-FETs on various substrates, measure the temperature dependence of the FET down to 4 kelvin and then use those transistors for biosensing.