nQuadratic Model of MOSFET:
nISD = (μCoxW)[(VGS – VT)VDS – VDS2/2] for VDS << VGS – VT
nSlope of IVg curve = μCoxWVDS
Plugging in the
numbers yields mobility of 0.9 cm2/V*s
Mobility's: Single Carbon NT = 105
Silicon = 102-103
NT
Network = 101
Organic
Semiconductor = 10-4 - 10-1
High Mobility means
device can operate at Higher frequency!!!
Calculation of Mobility
L
L