nQuadratic Model of MOSFET:
nISD = (μCoxW)[(VGS – VT)VDS – VDS2/2] for VDS << VGS – VT
n
nSlope of IVg curve = μCoxWVDS
n
nPlugging in the
numbers yields mobility of 0.9 cm2/V*s
n
nMobility's: Single Carbon NT = 105
n Silicon = 102-103
n NT
Network = 101
n Organic
Semiconductor = 10-4 - 10-1
n
nHigh Mobility means
device can operate at Higher frequency!!!
n