Nanotube FET transistor
S
D
SiO2
Si back gate
Vg
Vsd
Isd
Gate Voltage (V)
A. Max Conductance
    
B. Modulation – Signal to Noise

C. Transconductance (slope at zero gate)
     Mobility of Carriers (electrons or holes)

D. Threshold
     Shift – Changes in Doping

A
B
C
D
p-type
Ideal  NTFET Device
AFM image