Nanotube FET transistor
S
D
SiO
2
Si back gate
Vg
Vsd
Isd
Gate Voltage (V)
A
.
Max Conductance
B
.
Modulation
– Signal to Noise
C
.
Transconductance
(slope at zero gate)
Mobility of Carriers (electrons or holes)
D
.
Threshold
Shift – Changes in Doping
A
B
C
D
p-type
Ideal
NTFET Device
AFM image