Device Fabrication
Steps to making Device
1)5000 Ao SiO2 on doped Silicon
•commercially bought, HF remove SiO2 from one side
2)Deposit NT Film
3)Evaporate Gold source and drain through shadow masking
4)Use Silver epoxy to attach wires
5)Clamp onto metal chuck to apply Vg


SiO2
•Dielectric Breakdown
Breakdown Electric Field in SiO2 = 1 x 107 V/cm