nQuadratic Model of MOSFET:
nISD = (μCoxW)[(VGS – VT)VDS – VDS2/2]  for VDS << VGS – VT
n
nSlope of IVg curve = μCoxWVDS 

nPlugging in the numbers yields mobility of  0.9 cm2/V*s
n
nMobility's:Single Carbon NT = 105
n            Silicon      = 102-103
nNT Network      = 101
nOrganic Semiconductor = 10-4 - 10-1
n
nHigh Mobility means device can operate at Higher frequency!!!
n
Calculation of Mobility
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